On the electrical deactivation of arsenic in silicon
|Title||On the electrical deactivation of arsenic in silicon|
|Author(s)||U. Myler, P. Simpson, D. Lawther, P. Rousseau|
|Journal||Journal of Vacuum Science & Technology B|
|Abstract||Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.|
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