On the electrical deactivation of arsenic in silicon

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Title On the electrical deactivation of arsenic in silicon
Author(s) U. Myler, P. J. Simpson, Derek W. Lawther, P. M. Rousseau
Journal Journal of Vacuum Science & Technology B
Date 1997
Volume 15
Issue 3
Start page 757
End page 759
Abstract Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.

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