Variable-energy positron beam study of arsenic ...
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Citation
| Title | Variable-energy positron beam study of arsenic diffusion in poly-silicon |
| Author(s) | D. Lawther, R. Khatri, P. Simpson, P. Schultz, I. Calder, L. Weaver |
| Journal | Applied Surface Science |
| Date | 1995 |
| Volume | 85 |
| Issue | 1-4 |
| Start page | 265 |
| End page | 270 |
| Abstract | The positron beam technique is shown to be a sensitive indicator of the presence of arsenic within the grain boundaries of poly-silicon. Variable-energy positron beam and secondary-ion mass spectrometry studies have been performed on As+-implanted pre-amorphized Si samples as a function of dose and rapid thermal anneal temperature. Positron trapping within negatively-charged grain boundaries of the recrystallized poly-Si is observed, resulting in a similar to 2% elevation in the Doppler-broadening S lineshape parameter value. Infusion of As+-ions into the grain boundaries passivates the charge and reduces their specific positron-trapping rate. |
| ISSN | 0169-4332 |
Using APA 6th Edition citation style.
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