On the electrical deactivation of arsenic in silicon
Myler, U.Simpson, P. J.Lawther, Derek W.Rousseau, P. M.
Journal of Vacuum Science & Technology B
Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.