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On the electrical deactivation of arsenic in silicon
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Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able ...
Positron-beam techniques for materials characterization
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Chemical information in positron annihilation spectra
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Positron annihilation spectra of arsenic- and gold-implanted silicon are compared:with spectra from bulk samples of arsenic and gold. Spectra with strongly reduced background intensities were recorded using a two detector coincidence system with a variable-energy positron beam. It is shown that feat...
Positron beam study of annealed silicon nitride films
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Positron annihilation spectroscopy has been used to study silicon nitride films grown by plasma-enhanced chemical vapor deposition and annealed at different temperatures. For both silicon-rich and nitrogen-rich films, the positron line shape (S) parameter increases after annealing for 15 min at temp...
Analysis of x-ray powder diffraction patterns of rapidly quenched A1-based alloys on the basis of quasicrystalline and cubic models
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Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon
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A Doppler broadening positron annihilation technique for the study of defects in bulk samples
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A Doppler broadening positron annihilation technique which allows for the study of near surface defects in bulk samples is described. The method is capable of observing changes in the homogeneous bulk defect concentration in a sample acid is also able to characterize spatially localized near-surface...
Vacancy generation resulting from electrical deactivation of arsenic
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Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., As-n-v) to the deactivation process is reported. The average number of arsenic atoms per complex, (n) ...
In situ 64Cu Doppler-broadening positron-annihilation methods for elevated temperature study of defect formation in metals formation in metals
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Doppler-broadening positron-annihilation-spectroscopy experiment that utilizes an in situ Cu-64 source for the study of Cu and Cu-containing materials is described. This technique is particularly useful for the investigation of defect structure at elevated temperatures, and the present instrumentati...
Thermal expansion of Bi2.2Sr1.8CaCu2Ox superconductor single crystals
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Using a low-temperature stage X-ray diffractometer, we have investigated the temperature dependence of the lattice parameters of single crystal superconductors Bi2.2Sr1.8CaCu2Ox. The experimental results show that (i) the lattice constants increase linearly with increasing temperature above about 10...