On the electrical deactivation of arsenic in silicon



Title On the electrical deactivation of arsenic in silicon
Author(s) U. Myler, P. J. Simpson, Derek W. Lawther, P. M. Rousseau
Journal Journal of Vacuum Science & Technology B
Date 1997
Volume 15
Issue 3
Start page 757
End page 759
Abstract Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.

Using APA 6th Edition citation style.

[Page generation failure. The bibliography processor requires a browser with Javascript enabled.]

Times viewed: 682

Adding this citation to "My List" will allow you to export this citation in other styles.