On the electrical deactivation of arsenic in silicon
Description
Citation
| Title | On the electrical deactivation of arsenic in silicon |
| Author(s) | U. Myler, P. Simpson, D. Lawther, P. Rousseau |
| Journal | Journal of Vacuum Science & Technology B |
| Date | 1997 |
| Volume | 15 |
| Issue | 3 |
| Start page | 757 |
| End page | 759 |
| Abstract | Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society. |
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