Vacancy generation resulting from electrical ...
Description
Citation
| Title | Vacancy generation resulting from electrical deactivation of arsenic |
| Author(s) | D. Lawther, U. Myler, P. Simpson, P. Rousseau, P. Griffin, J. Plummer |
| Journal | Applied Physics Letters |
| Date | 1995 |
| Volume | 67 |
| Issue | 24 |
| Start page | 3575 |
| End page | 3577 |
| Abstract | Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., As-n-v) to the deactivation process is reported. The average number of arsenic atoms per complex, (n) over bar>2, was determined by comparing the observed complex concentrations with those of the deactivated arsenic inferred from Hall-effect measurements. (C) 1995 American Institute of Physics. |
| ISSN | 0003-6951 |
Using APA 6th Edition citation style.
[Page generation failure. The bibliography processor requires a browser with Javascript enabled.]
Times viewed: 72
