Positron annihilation spectra of arsenic- and gold-implanted silicon are compared:with spectra from bulk samples of arsenic and gold. Spectra with strongly reduced background intensities were recorded using a two detector coincidence system with a variable-energy positron beam. It is shown that feat...

Positron annihilation spectroscopy has been used to study silicon nitride films grown by plasma-enhanced chemical vapor deposition and annealed at different temperatures. For both silicon-rich and nitrogen-rich films, the positron line shape (S) parameter increases after annealing for 15 min at temp...

A Doppler broadening positron annihilation technique which allows for the study of near surface defects in bulk samples is described. The method is capable of observing changes in the homogeneous bulk defect concentration in a sample acid is also able to characterize spatially localized near-surface...

Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., As-n-v) to the deactivation process is reported. The average number of arsenic atoms per complex, (n) ...

Doppler-broadening positron-annihilation-spectroscopy experiment that utilizes an in situ Cu-64 source for the study of Cu and Cu-containing materials is described. This technique is particularly useful for the investigation of defect structure at elevated temperatures, and the present instrumentati...

Using a low-temperature stage X-ray diffractometer, we have investigated the temperature dependence of the lattice parameters of single crystal superconductors Bi2.2Sr1.8CaCu2Ox. The experimental results show that (i) the lattice constants increase linearly with increasing temperature above about 10...

Room temperature Fe-57 Mossbauer effect measurements of the one- and two-dimensional quasicrystalline phases of Al75Pd15Fe10 are reported. Both materials show Mossbauer spectra with asymmetric doublets which have been analyzed in terms of a distribution of quadrupole splittings, and in terms of a di...

The positron beam technique is shown to be a sensitive indicator of the presence of arsenic within the grain boundaries of poly-silicon. Variable-energy positron beam and secondary-ion mass spectrometry studies have been performed on As+-implanted pre-amorphized Si samples as a function of dose and ...