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A positron annihilation study of crystalline, quasicrystalline and amorphous Al-Mn-Si alloys
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On the electrical deactivation of arsenic in silicon
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Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able ...
Positron-beam techniques for materials characterization
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Application of Mössbauer effect spectroscopy to the study of quasicrystalline materials
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